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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage150 V
Continuous drain current3 ~ 13 A
On-resistance94 mΩMax · 10A
Gate threshold voltage4.6 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C3A (Ta), 13A (Tc)
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Power Dissipation (Max)2.1W (Ta), 41W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F
Other
Base Product NumberAOTF454
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds985 pF @ 75 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs94mOhm @ 10A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.6V @ 250µA

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