Alpha & Omega Semiconductor Inc.United States

AOU2N60

Not For New DesignsSingle FETs, MOSFETsTO-251-3

MOSFET N-CH 600V 2A TO251-3

See alternativesAsk AI FAEDatasheet PDF

All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage600 V
Continuous drain current2 A
On-resistance4.4 ΩMax · 1A
Gate threshold voltage4.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)56.8W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-50°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTO-251-3
Other
Base Product NumberAOU2
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds325 pF @ 25 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs4.4Ohm @ 1A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 250µA

Documents

DatasheetDatasheet · 547.3 KB · 2026-09-21DatasheetDatasheet · 368.7 KB · 2026-09-21Package DrawingPackage Drawing · 488.1 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 287.9 KB · 2026-09-22Package DrawingPackage Drawing · 262.8 KB · 2026-09-22Package DrawingPackage Drawing · 106.2 KB · 2026-09-22OtherOther · 185.6 KB · 2026-09-21
Open document center