Alpha & Omega Semiconductor Inc.United States

AOU3N50

Not For New DesignsSingle FETs, MOSFETsTO-251-3

MOSFET N-CH 500V 2.8A TO251-3

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage500 V
Continuous drain current2.8 A
On-resistance3 ΩMax · 1.5A
Gate threshold voltage4.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)57W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-50°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTO-251-3
Other
Base Product NumberAOU3
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds331 pF @ 25 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs3Ohm @ 1.5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 250µA

Documents

DatasheetDatasheet · 565.2 KB · 2026-09-22Package DrawingPackage Drawing · 488.1 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 269.6 KB · 2026-09-22Package DrawingPackage Drawing · 262.8 KB · 2026-09-22Package DrawingPackage Drawing · 105.3 KB · 2026-09-22OtherOther · 185.6 KB · 2026-09-21
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