MOSFET N-CH 600V 2.5A TO251-3
沟道N 沟道
耐压600 V
连续漏极电流2.5 A
导通电阻3.5 Ω
全部替代型号
查看完整报告技术参数
沟道N 沟道
耐压600 V
连续漏极电流2.5 A
导通电阻3.5 Ω最大 · 1.25A
阈值电压4.5 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 56.8W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | TO-251-3 |
| 其他 | |
| Base Product Number | AOU3 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1.25A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |