AOUS66616

AOUS66616

末批订购单 FET,MOSFET

MOSFET N-CH 60V 33A/92A ULTRASO8

沟道N 沟道
耐压60 V
连续漏极电流33 ~ 92 A
导通电阻3.3 mΩ

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技术参数

沟道N 沟道
耐压60 V
连续漏极电流33 ~ 92 A
导通电阻3.3 mΩ最大 · 20A
阈值电压3.4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C33A (Ta), 92A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)6.2W (Ta), 92.5W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case3-PowerSMD, Flat Leads
Supplier Device PackageUltraSO-8™
其他
Base Product NumberAOUS666
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2870 pF @ 30 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs3.3mOhm @ 20A, 10V
SeriesAlphaSGT™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.4V @ 250µA

器件图片

技术资料