Alpha & Omega Semiconductor Inc.United States
MOSFET N-CHANNEL 60V 19A TO251B
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current19 A
On-resistance9.5 mΩMax · 20A
Gate threshold voltage2.4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 59.5W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Supplier Device Package | TO-251B |
| Other | |
| Base Product Number | AOY2610 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 30 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V |
| Series | AlphaSGT™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |