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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current15 ~ 70 A
On-resistance6.7 mΩMax · 20A
Gate threshold voltage3.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C15A (Ta), 70A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10V, 20V
Power Dissipation (Max)2.5W (Ta), 90W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-251-3 Stub Leads, IPak
Supplier Device PackageTO-251B
Other
Base Product NumberAOY42
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2760 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs6.7mOhm @ 20A, 20V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3.5V @ 250µA

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