Alpha & Omega Semiconductor Inc.United States
MOSFET N-CH 30V 18A/50A TO251B
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Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current18 ~ 50 A
On-resistance5 mΩMax · 20A
Gate threshold voltage2.4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 50A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Supplier Device Package | TO-251B |
| Other | |
| Base Product Number | AOY52 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 15 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
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