MOSFET N-CH 100V 16.5/58A TO251B
沟道N 沟道
耐压100 V
连续漏极电流16.5 ~ 58 A
导通电阻11 mΩ
全部替代型号
查看完整报告技术参数
沟道N 沟道
耐压100 V
连续漏极电流16.5 ~ 58 A
导通电阻11 mΩ最大 · 20A
阈值电压2.6 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Ta), 58A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 6.2W (Ta), 73W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Supplier Device Package | TO-251B |
| 其他 | |
| Base Product Number | AOY669 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 50 V |
| Mfr | Alpha & Omega Semiconductor Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 20A, 10V |
| Series | AlphaSGT™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |