Microsemi CorporationUnited States
MOSFET N-CH 100V 225A ISOTOP
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current225 A
Gate threshold voltage4 VMax · 5mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 225A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 700W (Tc) |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | ISOTOP® |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1050 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21600 pF @ 25 V |
| Mfr | Microsemi Corporation |
| Product Status | Obsolete |
| Series | POWER MOS V® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |