沟道N 沟道
耐压200 V
连续漏极电流208 A
导通电阻10 mΩ
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沟道N 沟道
耐压200 V
连续漏极电流208 A
导通电阻10 mΩ最大 · 104A
阈值电压5 V最大 · 5mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 208A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 781W (Tc) |
| 环境与封装 | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | SP4 |
| Supplier Device Package | SP4 |
| 其他 | |
| Base Product Number | APTM20 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 25 V |
| Mfr | Microchip Technology |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 104A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
技术资料
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