Microsemi CorporationUnited States
MOSFET 2N-CH 600V 20A SP1
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Drain to Source Voltage (Vdss) | 600V |
| Power - Max | 208W |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | SP1 |
| Supplier Device Package | SP1 |
| Other | |
| Base Product Number | APTM60 |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5316pF @ 25V |
| Mfr | Microsemi Corporation |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 276mOhm @ 17A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |