Rohm SemiconductorJapan
DIODE GEN PURP 80V 215MA SSD3
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View full reportTechnical parameters
Key specs
Reverse voltage80 V
Average rectified current215 mA
Forward voltage1.25 VMax · 150 mA
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 215mA |
| Current - Reverse Leakage @ Vr | 5 nA @ 75 V |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150°C (Max) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Qualification | AEC-Q101 |
| Supplier Device Package | SSD3 |
| Other | |
| Base Product Number | BAS116 |
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 3 µs |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
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