BAW56SRAZ

DIODE ARR GP 90V 375MA DFN1412-6

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Power
Current - Average Rectified (Io) (per Diode)	375mA (DC)
Current - Reverse Leakage @ Vr	500 nA @ 80 V
Voltage - DC Reverse (Vr) (Max)	90 V
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 150 mA
Environment and package
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction	150°C (Max)
Package	Bulk
Package / Case	6-XFDFN Exposed Pad
Qualification	AEC-Q101
Supplier Device Package	DFN1412-6
Other
Base Product Number	BAW56
Diode Configuration	2 Pair Common Anode
Mfr	NXP Semiconductors
Product Status	Active
Reverse Recovery Time (trr)	4 ns
Series	-
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Technology	Standard

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