BAX16TR
onsemi美国

BAX16TR

在产单二极管

DIODE GEN PURP 150V 200MA DO35

反向耐压150 V
平均整流电流200 mA
正向压降650 mV
类型标准

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技术参数

反向耐压150 V
平均整流电流200 mA
正向压降650 mV最大 · 1 mA
类型标准Small Signal =< 200mA (Io)
电源
Current - Average Rectified (Io)200mA
Current - Reverse Leakage @ Vr100 nA @ 150 V
Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max) @ If650 mV @ 1 mA
环境与封装
Mounting TypeThrough Hole
Operating Temperature - Junction175°C (Max)
PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseDO-204AH, DO-35, Axial
Supplier Device PackageDO-35
其他
Base Product NumberBAX16
Capacitance @ Vr, F-
Mfronsemi
Product StatusActive
Reverse Recovery Time (trr)120 ns
Series-
SpeedSmall Signal =< 200mA (Io), Any Speed
TechnologyStandard

器件图片

技术资料