全部替代型号
查看完整报告技术参数
类型NPN
集射极耐压100 V
集电极电流1 A最大
放大倍数 hFE10000100mA
功率625 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 1 A |
| Power - Max | 625 mW |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 200MHz |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | TO-92 (TO-226) |
| 其他 | |
| Base Product Number | BC372 |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 250µA, 250mA |