All alternatives

View full report

Technical parameters

Key specs

TypePNP
Collector-emitter voltage30 V
Collector current1 AMax
DC current gain3000020mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)1 A
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)30 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce30000 @ 20mA, 2V
Frequency - Transition200MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
Base Product NumberBC516
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic1V @ 100µA, 100mA

Documents