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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 V
Collector current100 mAMax
DC current gain1102mA
Power500 mWMax
Power
Current - Collector Cutoff (Max)15nA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max500 mW
Voltage - Collector Emitter Breakdown (Max)30 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA, 5V
Frequency - Transition300MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
Base Product NumberBC549
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA

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