All alternatives

View full report

Technical parameters

Key specs

TypeNPN
Collector-emitter voltage55 V
Collector current1 AMax
DC current gain10000200mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)50nA
Current - Collector (Ic) (Max)1 A
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)55 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 200mA, 5V
Frequency - Transition150MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92 (TO-226)
Other
Base Product NumberBC618
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.1V @ 200µA, 200mA

Documents

No documents are linked to this part yet.