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Technical parameters

Key specs

TypePNP
Collector-emitter voltage80 V
Collector current1 AMax
DC current gain40150mA
Power1 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)1 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition100MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
Base Product NumberBC640
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA

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