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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 ~ 65 V
Collector current100 mAMax
DC current gain2002mA
Power200 mWMax

Datasheet-verified parameters

17 items
ParameterValue and test conditionsSource
TypeNPN
Collector-Emitter Voltage30 - 65 V
Collector Current0.1 A
Power Dissipation200 mW
PackageSOT-323
Junction temperature range-55 to +150 °C
RoHS CompliantRoHS Compliant
Halogen-freeHalogen-free
Collector-Base Voltage30 - 80 V
Emitter-Base Voltage5 - 6 V
Peak Collector Current0.2 A
Maximum Junction Temperature150 °C
Storage temperature range-55 to +150 °C
Terminal FinishMatte tin plated, lead free
Moisture sensitivity level1
Packing3K / 7'' Reel
Device Marking1B
All parameters (17)ExpandCollapse
Power
Current - Collector Cutoff (Max)15nA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max200 mW
Voltage - Collector Emitter Breakdown (Max)65 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition100MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323
Other
Base Product NumberBC846
MfrTaiwan Semiconductor Corporation
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA

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