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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage350 V
Collector current500 mAMax
DC current gain3050mA
Power20 WMax
Power
Current - Collector Cutoff (Max)100µA (ICBO)
Current - Collector (Ic) (Max)500 mA
Power - Max20 W
Voltage - Collector Emitter Breakdown (Max)350 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Other
Base Product NumberBD159
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic-

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