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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage45 V
Collector current3 AMax
DC current gain40150mA
Power30 WMax
Power
Current - Collector Cutoff (Max)100µA (ICBO)
Current - Collector (Ic) (Max)3 A
Power - Max30 W
Voltage - Collector Emitter Breakdown (Max)45 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition3MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126-3
Other
Base Product NumberBD175
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic800mV @ 100mA, 1A

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