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Technical parameters

Key specs

TypePNP
Collector-emitter voltage80 V
Collector current1 AMax
DC current gain40150mA
Power30 WMax
Power
Current - Collector Cutoff (Max)1mA (ICBO)
Current - Collector (Ic) (Max)1 A
Power - Max30 W
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition3MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Other
Base Product NumberBD180
Mfronsemi
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic800mV @ 100mA, 1A

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