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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage32 V
Collector current4 AMax
DC current gain4010mA
Power36 WMax
Power
Current - Collector Cutoff (Max)100µA
Current - Collector (Ic) (Max)4 A
Power - Max36 W
Voltage - Collector Emitter Breakdown (Max)32 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 5V
Frequency - Transition3MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageSOT-32-3
Other
Base Product NumberBD435
MfrSTMicroelectronics
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A

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