onsemiUnited States
POWER BIPOLAR TRANSISTOR, 4A, 10
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View full reportTechnical parameters
Key specs
TypePNP
Collector-emitter voltage100 V
Collector current4 AMax
DC current gain7501.5A
Power14 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 500µA |
| Current - Collector (Ic) (Max) | 4 A |
| Power - Max | 14 W |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-126-3 |
| Other | |
| Mfr | onsemi |
| Product Status | Active |
| Series | - |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |