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Technical parameters

Key specs

TypePNP
Collector-emitter voltage80 V
Collector current10 AMax
DC current gain154A
Power90 WMax
Power
Current - Collector Cutoff (Max)1mA (ICBO)
Current - Collector (Ic) (Max)10 A
Power - Max90 W
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 4A, 2V
Frequency - Transition1.5MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberBD810
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.1V @ 300mA, 3A

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