Central Semiconductor CorpUnited States

BDV64B

ObsoleteSingle Bipolar TransistorsTO-218

TRANS PNP 100V 12A TO218

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Technical parameters

Key specs

TypePNP
Collector-emitter voltage100 V
Collector current12 AMax
DC current gain10005A
Power125 WMax
Power
Current - Collector Cutoff (Max)-
Current - Collector (Ic) (Max)12 A
Power - Max125 W
Voltage - Collector Emitter Breakdown (Max)100 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 4V
Frequency - Transition60MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-
PackageBulk
Package / CaseTO-218-3
Supplier Device PackageTO-218
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic-

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