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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage300 V
Collector current100 mAMax
DC current gain2530mA
Power5 WMax
Power
Current - Collector Cutoff (Max)50nA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max5 W
Voltage - Collector Emitter Breakdown (Max)300 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 30mA, 10V
Frequency - Transition90MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature200°C (TJ)
PackageBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Other
Base Product NumberBF259
MfrSTMicroelectronics
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 6mA, 30mA

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