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Technical parameters

Key specs

TypePNP
Collector-emitter voltage300 V
Collector current500 mAMax
DC current gain5025mA
Power830 mWMax
Power
Current - Collector Cutoff (Max)10nA (ICBO)
Current - Collector (Ic) (Max)500 mA
Power - Max830 mW
Voltage - Collector Emitter Breakdown (Max)300 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 25mA, 20V
Frequency - Transition60MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageCut Tape (CT) Tape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
Base Product NumberBF421
MfrSTMicroelectronics
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 30mA

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