Infineon TechnologiesGermany
RF TRANSISTOR, X BAND, NPN
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 25mA |
| Power - Max | 100mW |
| Voltage - Collector Emitter Breakdown (Max) | 4.7V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 13mA, 3V |
| Frequency - Transition | 45GHz |
| Gain | 10.5dB ~ 28.5dB |
| Noise Figure (dB Typ @ f) | 0.4dB ~ 0.95dB @ 150MHz ~ 10GHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Bulk |
| Package / Case | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT343-4-2 |
| Other | |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |