Diodes IncorporatedUnited States
MOSFET N-CH 200V 120MA TO92-3
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage200 V
Continuous drain current120 mA
On-resistance30 ΩMax · 100mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.6V, 5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92 |
| Other | |
| Base Product Number | BS107 |
| FET Feature | - |
| FET Type | N-Channel |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 30Ohm @ 100mA, 5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | - |