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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage200 V
Continuous drain current120 mA
On-resistance30 ΩMax · 100mA
Power
Current - Continuous Drain (Id) @ 25°C120mA (Ta)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)2.6V, 5V
Power Dissipation (Max)500mW (Ta)
Environment and package
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseE-Line-3
QualificationAEC-Q101
Supplier Device PackageE-Line (TO-92 compatible)
Other
Base Product NumberBS107
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds85 pF @ 25 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs30Ohm @ 100mA, 5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id-

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