Infineon TechnologiesGermany
MOSFET N-CH 60V 14A/20A 8TSDSON
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current14 ~ 20 A
On-resistance6.7 mΩMax · 20A
Gate threshold voltage2.2 VMax · 35μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 20A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 78W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TSDSON-8 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 30 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 20A, 10V |
| Series | OptiMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 35µA |