BSC059N03ST

单 FET,MOSFET

MOSFET N-CH 30V 19A/89A TDSON

沟道N 沟道
耐压30 V
连续漏极电流19 ~ 89 A
导通电阻5.5 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流19 ~ 89 A
导通电阻5.5 mΩ最大 · 50A
阈值电压2 V最大 · 35μA
电源
Current - Continuous Drain (Id) @ 25°C19A (Ta), 89A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)-
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8-1
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2670 pF @ 15 V
MfrInfineon Technologies
Product StatusDiscontinued at Digi-Key
Rds On (Max) @ Id, Vgs5.5mOhm @ 50A, 10V
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 35µA

技术资料