BSC059N04LSGATMA1

在产单 FET,MOSFET

MOSFET N-CH 40V 16A/73A TDSON

沟道N 沟道
耐压40 V
连续漏极电流16 ~ 73 A
导通电阻5.9 mΩ

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技术参数

沟道N 沟道
耐压40 V
连续漏极电流16 ~ 73 A
导通电阻5.9 mΩ最大 · 50A
阈值电压2 V最大 · 23μA
电源
Current - Continuous Drain (Id) @ 25°C16A (Ta), 73A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8-5
其他
Base Product NumberBSC059
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 20 V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs5.9mOhm @ 50A, 10V
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 23µA

技术资料