BSC0702LSATMA1

BSC0702LSATMA1

不推荐用于新设计单 FET,MOSFET

MOSFET N-CH 60V 100A SUPERSO8

沟道N 沟道
耐压60 V
连续漏极电流100 A
导通电阻2.3 mΩ

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技术参数

沟道N 沟道
耐压60 V
连续漏极电流100 A
导通电阻2.3 mΩ最大 · 50A
阈值电压2.3 V最大 · 49μA
电源
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)83W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
其他
Base Product NumberBSC0702
FET FeatureStandard
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4400 pF @ 30 V
MfrInfineon Technologies
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs2.3mOhm @ 50A, 10V
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 49µA

器件图片

技术资料