Infineon TechnologiesGermany
TRENCH >=100V PG-TDSON-8
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Key specs
ChannelN-channel
Drain-source voltage120 V
Continuous drain current12 ~ 99 A
On-resistance8 mΩMax · 50A
Gate threshold voltage2.4 VMax · 112μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 99A (Tc) |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 156W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TDSON-8 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 60 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 50A, 10V |
| Series | OptiMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 112µA |
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