BSH205G2R

BSH205G2R

在产单 FET,MOSFETTO-236AB

MOSFET P-CH 20V 2A TO236AB

沟道P 沟道
耐压20 V
连续漏极电流2 A
导通电阻170 mΩ

全部替代型号

查看完整报告

技术参数

沟道P 沟道
耐压20 V
连续漏极电流2 A
导通电阻170 mΩ最大 · 2A
阈值电压950 mV最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Power Dissipation (Max)480mW (Ta)
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
QualificationAEC-Q100
Supplier Device PackageTO-236AB
其他
Base Product NumberBSH205
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds418 pF @ 10 V
MfrNexperia USA Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs170mOhm @ 2A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id950mV @ 250µA

器件图片

技术资料