Nexperia USA Inc.Netherlands
MOSFET N-CH 30V 10A SOT223
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current10 A
On-resistance30 mΩMax · 5A
Gate threshold voltage2.8 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 8.3W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 24 V |
| Mfr | Nexperia USA Inc. |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5A, 10V |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |