Infineon TechnologiesGermany
MOSFET N-CH 200V 660MA SOT223-4
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage200 V
Continuous drain current660 mA
On-resistance1.8 ΩMax · 660mA
Gate threshold voltage1 VMax · 400μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4-21 |
| Other | |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V |
| Series | SIPMOS® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 400µA |