MOSFET N-CH 200V 660MA SOT223-4
沟道N 沟道
耐压200 V
连续漏极电流660 mA
导通电阻1.8 Ω
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沟道N 沟道
耐压200 V
连续漏极电流660 mA
导通电阻1.8 Ω最大 · 660mA
阈值电压1.8 V最大 · 400μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1.8W (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4-21 |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 357 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V |
| Series | SIPMOS® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |