Infineon TechnologiesGermany
MOSFET P-CH 100V 1A SOT223-4
All alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage100 V
Continuous drain current1 A
On-resistance800 mΩMax · 1A
Gate threshold voltage1 VMax · 380μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4-21 |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1A, 10V |
| Series | SIPMOS® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 380µA |