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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage80 V
Collector current1 AMax
DC current gain2000500mA
Power800 mWMax
Power
Current - Collector Cutoff (Max)10µA
Current - Collector (Ic) (Max)1 A
Power - Max800 mW
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 500mA, 10V
Frequency - Transition-
Environment and package
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223 (TO-261)
Other
Base Product NumberBSP52
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.3V @ 500µA, 500mA

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