Infineon TechnologiesGermany
MOSFET N-CH 600V 90MA SOT89
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current90 mA
On-resistance45 ΩMax · 90mA
Gate threshold voltage2.3 VMax · 94μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 90mA (Ta) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Supplier Device Package | PG-SOT89 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 131 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 45Ohm @ 90mA, 10V |
| Series | SIPMOS® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.3V @ 94µA |
Documents
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