Central Semiconductor CorpUnited States
TRANS NPN DARL 80V 1A TO39
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage80 V
Collector current1 AMax
DC current gain2000500mA
Power800 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| Current - Collector (Ic) (Max) | 1 A |
| Power - Max | 800 mW |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Package | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Other | |
| Mfr | Central Semiconductor Corp |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 4mA, 1A |
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