NEXPERIA BSV52 - SMALL SIGNAL BI
类型NPN
集射极耐压12 V
集电极电流100 mA
放大倍数 hFE40
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类型NPN
集射极耐压12 V
集电极电流100 mA最大
放大倍数 hFE4010mA
功率250 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 400nA (ICBO) |
| Current - Collector (Ic) (Max) | 100 mA |
| Power - Max | 250 mW |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | 500MHz |
| 环境与封装 | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-236AB |
| 其他 | |
| Mfr | NXP Semiconductors |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |