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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C110A
Drain to Source Voltage (Vdss)1200V (1.2kV)
Power - Max-
Environment and package
Mounting TypeChassis Mount
Operating Temperature-
PackageBulk
Package / CaseModule
Supplier Device Package-
Other
Base Product NumberCAS110
Configuration-
FET FeatureSilicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
MfrWolfspeed, Inc.
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs-
Series-
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id-

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