Microchip TechnologyUnited States
DIODE GEN PURP 50V 200MA DIE
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View full reportTechnical parameters
Key specs
Reverse voltage50 V
Average rectified current200 mA
Forward voltage1 VMax · 200 mA
TypeStandardSmall Signal =< 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 200mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 200 mA |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Tape & Reel (TR) |
| Package / Case | Die |
| Supplier Device Package | Die |
| Other | |
| Capacitance @ Vr, F | 2.5pF @ 0V, 1MHz |
| Mfr | Microchip Technology |
| Product Status | Active |
| Reverse Recovery Time (trr) | 4 ns |
| Series | - |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Standard |
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