Microchip TechnologyUnited States
DIODE SCHOTTKY 30V 1A DO213AB
All alternatives
View full reportTechnical parameters
Key specs
Reverse voltage30 V
Average rectified current1 A
Forward voltage600 mVMax · 1 A
TypeSchottkyFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 100 µA @ 30 V |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 1 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Package | Tape & Reel (TR) |
| Package / Case | DO-213AB, MELF |
| Supplier Device Package | DO-213AB |
| Other | |
| Capacitance @ Vr, F | 0.9pF @ 5V, 1MHz |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
Documents
No documents are linked to this part yet.